Micron Technology 4ATF51264AZ-2G6E1 4GB vs Samsung M378A1K43DB2-CTD 8GB

总分

Micron Technology 4ATF51264AZ-2G6E1 4GB

Micron Technology 4ATF51264AZ-2G6E1 4GB

总分

Samsung M378A1K43DB2-CTD 8GB

Samsung M378A1K43DB2-CTD 8GB

差异规格评论

差异

Micron Technology 4ATF51264AZ-2G6E1 4GB

需要考虑的原因
Micron Technology 4ATF51264AZ-2G6E1 4GB

报告一个错误

更快的读取速度，GB/s

16.4 16

测试中的平均数值

Samsung M378A1K43DB2-CTD 8GB

需要考虑的原因
Samsung M378A1K43DB2-CTD 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 34

左右 -3% 更低的延时

规格

完整的技术规格清单

Micron Technology 4ATF51264AZ-2G6E1 4GB

Samsung M378A1K43DB2-CTD 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

34 33
读取速度，GB/s

16.4 16.0
写入速度，GB/s

12.1 12.1
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2616 2947

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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