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Micron Technology 8ATF2G64HZ-3G2E2 16GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs A-DATA Technology AO1E34RCSV1-BD7S 16GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
A-DATA Technology AO1E34RCSV1-BD7S 16GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
低于PassMark测试中的延时,ns
51
59
左右 14% 更低的延时
需要考虑的原因
A-DATA Technology AO1E34RCSV1-BD7S 16GB
报告一个错误
更快的读取速度,GB/s
16.2
15.6
测试中的平均数值
更快的写入速度,GB/s
13.7
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
59
读取速度,GB/s
15.6
16.2
写入速度,GB/s
11.8
13.7
内存带宽,mbps
25600
25600
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2687
2727
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB RAM的比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
takeMS International AG TMS2GB264D082-805G 2GB
UMAX Technology D4-2400-4GB-512X8-L 4GB
Samsung 1600 CL10 Series 8GB
V-Color Technology Inc. TA48G30S815G 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology BLS8G4D26BFSEK.8FD 8GB
A-DATA Technology DQVE1908 512MB
A-DATA Technology DDR4 3000 2OZ 8GB
SK Hynix HMA82GS6DJR8N-WM 16GB
Crucial Technology BL16G26C16U4W.16FD 16GB
Samsung M3 78T5663RZ3-CF7 2GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
Samsung M378A1K43EB2-CWE 8GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Samsung M378B5773DH0-CH9 2GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
Kingston DDR3 1333G 2GB
A-DATA Technology DDR4 2400 2OZ 8GB
A-DATA Technology DDR3 1333G 2GB
G Skill Intl F4-3000C15-16GTZ 16GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology BLE8G4D34AEEAK.K8FB 8GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology CT8G4SFD8213.C16FDD2 8GB
报告一个错误
×
Bug description
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