RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Gloway International (HK) STKD4XMP2400-F 4GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Gloway International (HK) STKD4XMP2400-F 4GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Gloway International (HK) STKD4XMP2400-F 4GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更快的读取速度,GB/s
15.6
15.2
测试中的平均数值
更快的写入速度,GB/s
11.8
11.4
测试中的平均数值
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
Gloway International (HK) STKD4XMP2400-F 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
51
左右 -104% 更低的延时
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Gloway International (HK) STKD4XMP2400-F 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
25
读取速度,GB/s
15.6
15.2
写入速度,GB/s
11.8
11.4
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2687
2346
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gloway International (HK) STKD4XMP2400-F 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Gloway International (HK) STKD4XMP2400-F 4GB
SpecTek Incorporated ?????????????????? 2GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
G Skill Intl F4-3000C15-8GVKB 8GB
Hewlett-Packard 7EH64AA#ABC 8GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3200C16-16GTZN 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Transcend Information JM3200HLE-32G 32GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
SK Hynix HMA81GS6AFR8N-VK 8GB
TwinMOS 8DPT5MK8-TATP 2GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
Samsung M395T2863QZ4-CF76 1GB
Kingston KDK8NX-MIE 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-3466C16-16GTZR 16GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-3733C17-8GTZA 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Essencore Limited IM44GU48A30-FGGHAB 4GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Corsair CMT32GX4M2E3200C16 16GB
Kingston 9905403-061.A00LF 2GB
Mushkin 99[2/7/4]200[F/T] 8GB
报告一个错误
×
Bug description
Source link