Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Samsung M391A1G43EB1-CPB 8GB

总分

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分

Samsung M391A1G43EB1-CPB 8GB

Samsung M391A1G43EB1-CPB 8GB

差异规格评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB

报告一个错误

更快的读取速度，GB/s

15.6 12.4

测试中的平均数值
更快的写入速度，GB/s

11.8 10.6

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Samsung M391A1G43EB1-CPB 8GB

需要考虑的原因
Samsung M391A1G43EB1-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 51

左右 -104% 更低的延时

规格

完整的技术规格清单

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Samsung M391A1G43EB1-CPB 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

51 25
读取速度，GB/s

15.6 12.4
写入速度，GB/s

11.8 10.6
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2687 1511

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4DFRA32A.C16FN 16GB

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SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

G Skill Intl F4-3200C14-8GTZKY 8GB

G Skill Intl F4-3200C14-8GTZKY 8GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Teikon TMA81GS6AFR8N-UHSC 8GB

Teikon TMA81GS6AFR8N-UHSC 8GB

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Samsung M3 78T2863QZS-CF7 1GB

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Kingston 9905711-015.A00G 4GB