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Micron Technology 8ATF51264AZ-2G1A1 4GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Micron Technology 8ATF51264AZ-2G1A1 4GB vs Patriot Memory (PDP Systems) 2800 C18 Series 16GB

总分
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Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

总分
star star star star star
Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

差异 规格 评论

差异

Micron Technology 8ATF51264AZ-2G1A1 4GB 需要考虑的原因
Micron Technology 8ATF51264AZ-2G1A1 4GB
报告一个错误
Patriot Memory (PDP Systems) 2800 C18 Series 16GB 需要考虑的原因
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 43
    左右 -39% 更低的延时
  • 更快的读取速度，GB/s
    18 left arrow 12.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.2 left arrow 9.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13 更高的带宽

规格

完整的技术规格清单
Micron Technology 8ATF51264AZ-2G1A1 4GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 31
  • 读取速度，GB/s
    12.2 left arrow 18.0
  • 写入速度，GB/s
    9.7 left arrow 15.2
  • 内存带宽，mbps
    17000 left arrow 19200
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2501 left arrow 3040

Micron Technology 8ATF51264AZ-2G1A1 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Micron Technology 8ATF51264AZ-2G1A1 4GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
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Corsair CMW8GX4M1Z3600C18 8GB
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Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
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Crucial Technology CT8G4SFS8266.M8FB 8GB
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Kingston K1N7HK-ELC 2GB
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Corsair CMW128GX4M4E3200C16 32GB
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G Skill Intl F3-12800CL7-4GBXM 4GB
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内存RAM
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内存RAM
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内存RAM
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A-DATA Technology DQVE1908 512MB
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ISD Technology Limited IM44GU48A30-GIIHM 4GB
内存RAM
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Samsung M393B1G70BH0-CK0 8GB
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内存RAM
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Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
内存RAM
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Samsung M3 78T3354BZ0-CCC 256MB
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Kingston XVTW4H-MIE 32GB
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