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Micron Technology 8ATF51264AZ-2G1B1 4GB
G Skill Intl F4-3600C19-16GSXW 16GB

Micron Technology 8ATF51264AZ-2G1B1 4GB vs G Skill Intl F4-3600C19-16GSXW 16GB

总分
star star star star star
Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

总分
star star star star star
G Skill Intl F4-3600C19-16GSXW 16GB

G Skill Intl F4-3600C19-16GSXW 16GB

差异 规格 评论

差异

Micron Technology 8ATF51264AZ-2G1B1 4GB 需要考虑的原因
Micron Technology 8ATF51264AZ-2G1B1 4GB
报告一个错误
G Skill Intl F4-3600C19-16GSXW 16GB 需要考虑的原因
G Skill Intl F4-3600C19-16GSXW 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 29
    左右 -26% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 15.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 8ATF51264AZ-2G1B1 4GB
G Skill Intl F4-3600C19-16GSXW 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 23
  • 读取速度，GB/s
    15.8 left arrow 17.8
  • 写入速度，GB/s
    11.8 left arrow 12.8
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2711 left arrow 3091

Micron Technology 8ATF51264AZ-2G1B1 4GB RAM的比较

Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3600C19-16GSXW 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M378A1G43DB0-CPB 8GB
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Crucial Technology CT4G4DFS824A.M8FF 4GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Crucial Technology CT8G4DFD824A.M16FF 8GB
Crucial Technology CT8G4DFD824A.M16FF 8GB
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A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
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Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingston KHX21334D4/8G 8GB
Kingston KHX21334D4/8G 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
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Gloway International Co. Ltd. TYP4U3000E16082C 8GB
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内存RAM
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Kingston 9905584-016.A00LF 4GB
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Corsair CMT64GX4M2C3600C18 32GB
内存RAM
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Nanya Technology NT2GT64U8HD0BN-AD 2GB
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AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
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Kingston XW21KG-MIE2 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
内存RAM
Corsair CMX32GX3M4A1600C11 8GB
Corsair CMX32GX3M4A1600C11 8GB
G Skill Intl F4-3400C16-8GTZSW 8GB
G Skill Intl F4-3400C16-8GTZSW 8GB
内存RAM
Kingston KHX1866C10D3/8GX 8GB
Kingston KHX1866C10D3/8GX 8GB
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SK Hynix HMA82GU6CJR8N-XN 16GB
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Kingston 9905403-444.A00LF 4GB
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Kingmax Semiconductor GLLG42F-DA---------- 8GB
内存RAM
SK Hynix HMT451U7BFR8C-RD 4GB
SK Hynix HMT451U7BFR8C-RD 4GB
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Corsair CMK64GX4M2D3600C18 32GB
内存RAM