Micron Technology 8ATF51264HZ-2G1B1 4GB vs V-GEN D4H8GS24A8 8GB

总分

Micron Technology 8ATF51264HZ-2G1B1 4GB

Micron Technology 8ATF51264HZ-2G1B1 4GB

总分

V-GEN D4H8GS24A8 8GB

V-GEN D4H8GS24A8 8GB

差异规格评论

差异

Micron Technology 8ATF51264HZ-2G1B1 4GB

需要考虑的原因
Micron Technology 8ATF51264HZ-2G1B1 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 92

左右 63% 更低的延时
更快的写入速度，GB/s

10.9 8.2

测试中的平均数值

V-GEN D4H8GS24A8 8GB

需要考虑的原因
V-GEN D4H8GS24A8 8GB

报告一个错误

更快的读取速度，GB/s

15.1 14.3

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13 更高的带宽

规格

完整的技术规格清单

Micron Technology 8ATF51264HZ-2G1B1 4GB

V-GEN D4H8GS24A8 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

34 92
读取速度，GB/s

14.3 15.1
写入速度，GB/s

10.9 8.2
内存带宽，mbps

17000 19200

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2201 1640

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Samsung M378B5773DH0-CH9 2GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

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SpecTek Incorporated ?????????????????? 2GB

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Hewlett-Packard 48U45AA# 16GB

Team Group Inc. ZEUS-2133 8GB

Team Group Inc. ZEUS-2133 8GB

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Kingston 99U5734-036.A00G 16GB

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Corsair CMK32GX4M4Z2933C16 8GB

Corsair CMK32GX4M4Z2933C16 8GB