Micron Technology 8JSF25664HZ-1G4D1 2GB vs G Skill Intl F4-3200C15-16GTZKY 16GB

总分

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

总分

G Skill Intl F4-3200C15-16GTZKY 16GB

G Skill Intl F4-3200C15-16GTZKY 16GB

差异规格评论

差异

Micron Technology 8JSF25664HZ-1G4D1 2GB

需要考虑的原因
Micron Technology 8JSF25664HZ-1G4D1 2GB

报告一个错误

G Skill Intl F4-3200C15-16GTZKY 16GB

需要考虑的原因
G Skill Intl F4-3200C15-16GTZKY 16GB

报告一个错误

低于PassMark测试中的延时，ns

18 41

左右 -128% 更低的延时
更快的读取速度，GB/s

20.6 10.7

测试中的平均数值
更快的写入速度，GB/s

18.6 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Micron Technology 8JSF25664HZ-1G4D1 2GB

G Skill Intl F4-3200C15-16GTZKY 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 18
读取速度，GB/s

10.7 20.6
写入速度，GB/s

7.5 18.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1335 3607

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-2800C15-8GTZB 8GB

G Skill Intl F4-2800C15-8GTZB 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

G Skill Intl F4-3200C15-16GTZKY 16GB

G Skill Intl F4-3200C15-16GTZKY 16GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

Gloway International Co. Ltd. STK4U2400D17082C 8GB

Gloway International Co. Ltd. STK4U2400D17082C 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

G Skill Intl F4-3600C17-8GTZ 8GB

G Skill Intl F4-3600C17-8GTZ 8GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

G Skill Intl F4-3600C17-8GTZSW 8GB

G Skill Intl F4-3600C17-8GTZSW 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMD32GX4M4C3200C14M 8GB

Corsair CMD32GX4M4C3200C14M 8GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

AMD R744G2400U1S-UO 4GB

AMD R744G2400U1S-UO 4GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Crucial Technology BLS8G4D26BFSBK.8FD 8GB

Crucial Technology BLS8G4D26BFSBK.8FD 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Apacer Technology 78.C1GS7.AUC0B 8GB

Apacer Technology 78.C1GS7.AUC0B 8GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Corsair CM4B16G7L2666A16K2-O 16GB

Corsair CM4B16G7L2666A16K2-O 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Kingston KHX3200C16D4/32GX 32GB

Kingston KHX3200C16D4/32GX 32GB