Micron Technology 8KTF25664HZ-1G4M1 2GB vs Samsung M471B5673FH0-CF8 2GB

总分

Micron Technology 8KTF25664HZ-1G4M1 2GB

Micron Technology 8KTF25664HZ-1G4M1 2GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

差异规格评论

差异

Micron Technology 8KTF25664HZ-1G4M1 2GB

需要考虑的原因
Micron Technology 8KTF25664HZ-1G4M1 2GB

报告一个错误

更快的写入速度，GB/s

7.2 6.8

测试中的平均数值
更高的内存带宽，mbps

10600 8500

左右 1.25% 更高的带宽

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

30 41

左右 -37% 更低的延时
更快的读取速度，GB/s

10.6 10

测试中的平均数值

规格

完整的技术规格清单

Micron Technology 8KTF25664HZ-1G4M1 2GB

Samsung M471B5673FH0-CF8 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

41 30
读取速度，GB/s

10.0 10.6
写入速度，GB/s

7.2 6.8
内存带宽，mbps

10600 8500

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC3-8500, 1.5V, CAS Supported: 5 6 7 8
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1066 MHz
排名PassMark (越多越好)

1210 1479

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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UMAX Technology D4-2133-4GB-512X8-L 4GB

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Micron Technology 8KTF25664HZ-1G4M1 2GB

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Samsung M471B5673FH0-CF8 2GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Kingston 9905624-022.A00G 8GB

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Kingston XRGM6C-MIB 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

Corsair CMW32GX4M2Z2933C16 16GB

Corsair CMW32GX4M2Z2933C16 16GB