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Micron Technology 8KTF51264AZ-1G6E1 4GB
Patriot Memory (PDP Systems) PSD34G13332 4GB

Micron Technology 8KTF51264AZ-1G6E1 4GB vs Patriot Memory (PDP Systems) PSD34G13332 4GB

总分
star star star star star
Micron Technology 8KTF51264AZ-1G6E1 4GB

Micron Technology 8KTF51264AZ-1G6E1 4GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD34G13332 4GB

Patriot Memory (PDP Systems) PSD34G13332 4GB

差异 规格 评论

差异

Micron Technology 8KTF51264AZ-1G6E1 4GB 需要考虑的原因
Micron Technology 8KTF51264AZ-1G6E1 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.2 left arrow 13.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21% 更高的带宽
Patriot Memory (PDP Systems) PSD34G13332 4GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD34G13332 4GB
报告一个错误
  • 更快的写入速度，GB/s
    8.4 left arrow 8.1
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 8KTF51264AZ-1G6E1 4GB
Patriot Memory (PDP Systems) PSD34G13332 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    40 left arrow 40
  • 读取速度，GB/s
    14.2 left arrow 13.3
  • 写入速度，GB/s
    8.1 left arrow 8.4
  • 内存带宽，mbps
    12800 left arrow 10600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2157 left arrow 2229

Micron Technology 8KTF51264AZ-1G6E1 4GB RAM的比较

Micron Technology 8ATF51264AZ-2G1B1 4GB

Patriot Memory (PDP Systems) PSD34G13332 4GB RAM的比较

Samsung M378B5673FH0-CH9 2GB
Kingston 99U5402-462.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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