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Micron Technology 8KTF51264HZ-1G6E1 4GB
Kingston 9905783-025.A01G 16GB

Micron Technology 8KTF51264HZ-1G6E1 4GB vs Kingston 9905783-025.A01G 16GB

总分
star star star star star
Micron Technology 8KTF51264HZ-1G6E1 4GB

Micron Technology 8KTF51264HZ-1G6E1 4GB

总分
star star star star star
Kingston 9905783-025.A01G 16GB

Kingston 9905783-025.A01G 16GB

差异 规格 评论

差异

Micron Technology 8KTF51264HZ-1G6E1 4GB 需要考虑的原因
Micron Technology 8KTF51264HZ-1G6E1 4GB
报告一个错误
Kingston 9905783-025.A01G 16GB 需要考虑的原因
Kingston 9905783-025.A01G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 46
    左右 -24% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Micron Technology 8KTF51264HZ-1G6E1 4GB
Kingston 9905783-025.A01G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR5
  • PassMark中的延时，ns
    46 left arrow 37
  • 读取速度，GB/s
    12.0 left arrow 16.9
  • 写入速度，GB/s
    7.5 left arrow 14.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow no data / 2400 MHz
  • 排名PassMark (越多越好)
    1959 left arrow 3395

Micron Technology 8KTF51264HZ-1G6E1 4GB RAM的比较

Micron Technology 8KTF51264HZ-1G9P1 4GB
Crucial Technology BLS8G4D240FSB.16FAR 8GB

Kingston 9905783-025.A01G 16GB RAM的比较

Kingston ACR32D4U2S8HD-8X 8GB
Corsair CMK64GX4M2D3000C16 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Teikon TMA81GS6AFR8N-UHSC 8GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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