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Micron Technology 8KTF51264HZ-1G6E1 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB

Micron Technology 8KTF51264HZ-1G6E1 4GB vs Ramaxel Technology RMT3170EB68F9W1600 4GB

总分
star star star star star
Micron Technology 8KTF51264HZ-1G6E1 4GB

Micron Technology 8KTF51264HZ-1G6E1 4GB

总分
star star star star star
Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

差异 规格 评论

差异

Micron Technology 8KTF51264HZ-1G6E1 4GB 需要考虑的原因
Micron Technology 8KTF51264HZ-1G6E1 4GB
报告一个错误
  • 更快的读取速度，GB/s
    12 left arrow 11.4
    测试中的平均数值
Ramaxel Technology RMT3170EB68F9W1600 4GB 需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 46
    左右 -7% 更低的延时
  • 更快的写入速度，GB/s
    7.7 left arrow 7.5
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 8KTF51264HZ-1G6E1 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    46 left arrow 43
  • 读取速度，GB/s
    12.0 left arrow 11.4
  • 写入速度，GB/s
    7.5 left arrow 7.7
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1959 left arrow 1823

Micron Technology 8KTF51264HZ-1G6E1 4GB RAM的比较

Micron Technology 8KTF51264HZ-1G9P1 4GB
Crucial Technology BLS8G4D240FSB.16FAR 8GB

Ramaxel Technology RMT3170EB68F9W1600 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston HP26D4U6D8ME-16X 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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