Mushkin 991586 2GB vs Kingston KKN2NM-MIE 4GB

总分

Mushkin 991586 2GB

Mushkin 991586 2GB

总分

Kingston KKN2NM-MIE 4GB

Kingston KKN2NM-MIE 4GB

差异规格评论

差异

Mushkin 991586 2GB

需要考虑的原因
Mushkin 991586 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 38

左右 32% 更低的延时

Kingston KKN2NM-MIE 4GB

需要考虑的原因
Kingston KKN2NM-MIE 4GB

报告一个错误

更快的读取速度，GB/s

14.9 13.8

测试中的平均数值
更快的写入速度，GB/s

11.2 7.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Mushkin 991586 2GB

Kingston KKN2NM-MIE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 38
读取速度，GB/s

13.8 14.9
写入速度，GB/s

7.9 11.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2156 2174

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4SFS832A.M8FB 16GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Ramaxel Technology RMUA5090KE68H9F2133 4GB

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Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CM4X16GD3200C16K2E 16GB

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Samsung M378B5673EH1-CF8 2GB

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Team Group Inc. TEAMGROUP-ED4-2400 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Corsair CMW64GX4M2E3200C16 32GB

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InnoDisk Corporation M4S0-8GSSOCRG 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

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Kingston 9965433-034.A00LF 4GB

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Kingston 9965433-034.A00LF 4GB

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Corsair CMD8GX4M2B3000C15 4GB

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Kingston 99U5474-010.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N