Mushkin 994093 4GB vs G Skill Intl F3-12800CL7-4GBXM 4GB

总分

Mushkin 994093 4GB

Mushkin 994093 4GB

总分

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

差异规格评论

差异

Mushkin 994093 4GB

需要考虑的原因
Mushkin 994093 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 36

左右 44% 更低的延时
更快的读取速度，GB/s

17 14.8

测试中的平均数值
更快的写入速度，GB/s

12.3 8.7

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

G Skill Intl F3-12800CL7-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-12800CL7-4GBXM 4GB

报告一个错误

规格

完整的技术规格清单

Mushkin 994093 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

20 36
读取速度，GB/s

17.0 14.8
写入速度，GB/s

12.3 8.7
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

3108 2481

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378B5673EH1-CF8 2GB

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Kingston RB24D4U7S8MB-8 8GB

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Samsung M471B5273EB0-CK0 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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Corsair CMU64GX4M4D3000C16 16GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Corsair CMK32GX4M4Z2933C16 8GB

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PNY Electronics PNY 2GB

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Samsung M378A2G43BB3-CWE 16GB

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Corsair CMX8GX3M2A2000C9 4GB

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Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

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Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT8G4SFS824A.M8FA 8GB

Crucial Technology CT8G4SFS824A.M8FA 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB

Kingston KHX2400C12D4/8GX 8GB

Kingston KHX2400C12D4/8GX 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Kingmax Semiconductor GSLF62F-D8---------- 4GB

Kingmax Semiconductor GSLF62F-D8---------- 4GB

Samsung M471B5273EB0-CK0 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N