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Nanya Technology M2F4G64CB8HB9N-CG 4GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB vs Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

总分
star star star star star
Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

总分
star star star star star
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

差异 规格 评论

差异

Nanya Technology M2F4G64CB8HB9N-CG 4GB 需要考虑的原因
Nanya Technology M2F4G64CB8HB9N-CG 4GB
报告一个错误
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB 需要考虑的原因
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 24
    左右 -4% 更低的延时
  • 更快的读取速度，GB/s
    16.8 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 23
  • 读取速度，GB/s
    13.2 left arrow 16.8
  • 写入速度，GB/s
    8.8 left arrow 12.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2301 left arrow 2795

Nanya Technology M2F4G64CB8HB9N-CG 4GB RAM的比较

Nanya Technology M2F4G64CB8HD5N-CG 4GB
Kingston 9905678-024.A00G 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB RAM的比较

Kingston 99U5471-052.A00LF 8GB
G Skill Intl F3-2133C9-4GAB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Elpida EBJ40EG8BFWB-JS-F 4GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
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Crucial Technology CB16GU2666.C8ET 16GB
内存RAM
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A-DATA Technology DQKD1A08 1GB
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A-DATA Technology AD73I1C1674EV 4GB
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内存RAM
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
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Samsung M471A1K43CB1-CRC 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
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内存RAM
G Skill Intl F5-6400J3239G16G 16GB
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G Skill Intl F4-2800C17-8GIS 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
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Kingston 9905663-016.A00G 16GB
内存RAM
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Kingston HX318C10FK/4 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
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G Skill Intl F4-4000C18-16GTZR 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
SK Hynix HMA851S6DJR6N-VK 4GB
SK Hynix HMA851S6DJR6N-VK 4GB
内存RAM