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Nanya Technology M2F4G64CB8HB9N-CG 4GB
G Skill Intl F4-3600C14-16GTZRA 16GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB vs G Skill Intl F4-3600C14-16GTZRA 16GB

总分
star star star star star
Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

总分
star star star star star
G Skill Intl F4-3600C14-16GTZRA 16GB

G Skill Intl F4-3600C14-16GTZRA 16GB

差异 规格 评论

差异

Nanya Technology M2F4G64CB8HB9N-CG 4GB 需要考虑的原因
Nanya Technology M2F4G64CB8HB9N-CG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 27
    左右 11% 更低的延时
G Skill Intl F4-3600C14-16GTZRA 16GB 需要考虑的原因
G Skill Intl F4-3600C14-16GTZRA 16GB
报告一个错误
  • 更快的读取速度，GB/s
    22.7 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.9 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F4G64CB8HB9N-CG 4GB
G Skill Intl F4-3600C14-16GTZRA 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 27
  • 读取速度，GB/s
    13.2 left arrow 22.7
  • 写入速度，GB/s
    8.8 left arrow 14.9
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2301 left arrow 3861

Nanya Technology M2F4G64CB8HB9N-CG 4GB RAM的比较

Nanya Technology M2F4G64CB8HD5N-CG 4GB
Kingston 9905678-024.A00G 4GB

G Skill Intl F4-3600C14-16GTZRA 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Nanya Technology NT512T64U88B0BY-3C 512MB
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G Skill Intl F4-3000C16-16GSXKB 16GB
内存RAM
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Peak Electronics 256X64M-67E 2GB
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G Skill Intl F4-2800C16-8GVR 8GB
内存RAM
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SK Hynix HMAA2GS6AJR8N-XN 16GB
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Mushkin 991586 2GB
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内存RAM
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内存RAM
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内存RAM
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Corsair CMK16GX4M1C3000C16 16GB
内存RAM
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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Transcend Information TS1GLH64V1H 8GB
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内存RAM