Nanya Technology M2F4G64CB8HG5N-CG 4GB vs Corsair CMK192GX4M12P3200C16 16GB

总分

Nanya Technology M2F4G64CB8HG5N-CG 4GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB

总分

Corsair CMK192GX4M12P3200C16 16GB

Corsair CMK192GX4M12P3200C16 16GB

差异规格评论

差异

Nanya Technology M2F4G64CB8HG5N-CG 4GB

需要考虑的原因
Nanya Technology M2F4G64CB8HG5N-CG 4GB

报告一个错误

Corsair CMK192GX4M12P3200C16 16GB

需要考虑的原因
Corsair CMK192GX4M12P3200C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 41

左右 -41% 更低的延时
更快的读取速度，GB/s

14.2 13.3

测试中的平均数值
更快的写入速度，GB/s

12.9 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F4G64CB8HG5N-CG 4GB

Corsair CMK192GX4M12P3200C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 29
读取速度，GB/s

13.3 14.2
写入速度，GB/s

8.2 12.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1982 2873

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE800SO10240