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Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Crucial Technology CT16G4S24AM.M16FE 16GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs Crucial Technology CT16G4S24AM.M16FE 16GB

总分
star star star star star
Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

总分
star star star star star
Crucial Technology CT16G4S24AM.M16FE 16GB

Crucial Technology CT16G4S24AM.M16FE 16GB

差异 规格 评论

差异

Nanya Technology M2F4GH64CB8HB6N-CG 4GB 需要考虑的原因
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
报告一个错误
Crucial Technology CT16G4S24AM.M16FE 16GB 需要考虑的原因
Crucial Technology CT16G4S24AM.M16FE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 26
    左右 -13% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Crucial Technology CT16G4S24AM.M16FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 23
  • 读取速度，GB/s
    12.3 left arrow 16.9
  • 写入速度，GB/s
    7.1 left arrow 13.9
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1952 left arrow 3081

Nanya Technology M2F4GH64CB8HB6N-CG 4GB RAM的比较

SK Hynix HMT125U6DFR8C-H9 2GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Crucial Technology CT16G4S24AM.M16FE 16GB RAM的比较

Samsung M3 93T5750CZA-CE6 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Micron Technology 16JSF25664HZ-1G1F1 2GB
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G Skill Intl F4-3866C18-8GTZSW 8GB
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内存RAM
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G Skill Intl F5-6400J3239G16G 16GB
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内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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