Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs Kingston X5H5PW-MIB 8GB

总分

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

总分

Kingston X5H5PW-MIB 8GB

Kingston X5H5PW-MIB 8GB

差异规格评论

差异

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

需要考虑的原因
Nanya Technology M2F4GH64CB8HB6N-CG 4GB

报告一个错误

Kingston X5H5PW-MIB 8GB

需要考虑的原因
Kingston X5H5PW-MIB 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 26

左右 -13% 更低的延时
更快的读取速度，GB/s

16.9 12.3

测试中的平均数值
更快的写入速度，GB/s

12.5 7.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Kingston X5H5PW-MIB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 23
读取速度，GB/s

12.3 16.9
写入速度，GB/s

7.1 12.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1952 3018

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2F4GH64CB8HB6N-CG 4GB

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G Skill Intl F4-3200C16-16GTZRX 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

Kingston KHX2400C14S4/16G 16GB

Kingston KHX2400C14S4/16G 16GB

Corsair CMSX32GX4M2A2666C18 16GB

Corsair CMSX32GX4M2A2666C18 16GB

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Samsung M471B5273DH0-CK0 4GB

Apacer Technology 78.B1GM3.AF00B 4GB

Apacer Technology 78.B1GM3.AF00B 4GB

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SK Hynix HMA451U6AFR8N-TF 4GB

Crucial Technology CT16G4DFD8266.C16FJ 16GB

Crucial Technology CT16G4DFD8266.C16FJ 16GB