RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
比较
Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
总分
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
总分
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
31
左右 16% 更低的延时
需要考虑的原因
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
报告一个错误
更快的读取速度,GB/s
20.5
12.3
测试中的平均数值
更快的写入速度,GB/s
15.5
7.1
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
31
读取速度,GB/s
12.3
20.5
写入速度,GB/s
7.1
15.5
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
1952
3649
Nanya Technology M2F4GH64CB8HB6N-CG 4GB RAM的比较
SK Hynix HMT125U6DFR8C-H9 2GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5584-004.A00LF 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-3866C18-8GTZSW 8GB
Kingston ACR512X64D3S13C9G 4GB
Samsung V-GeN D4S4GL30A16TS5 4GB
AMD R538G1601U2S-UO 8GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair MK16GX44B3000C15 4GB
SK Hynix HMT41GU7BFR8A-PB 8GB
G Skill Intl F4-3466C16-8GTZSW 8GB
Samsung M3 78T2953EZ3-CF7 1GB
V-Color Technology Inc. TL48G32S8KGRGB16 8GB
Apacer Technology 78.01G86.9H50C 1GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Kingston KHX1866C10D3/4G 4GB
Apacer Technology 78.CAGP7.40C0B 8GB
AMD AE34G1601U1 4GB
Kingston HP32D4U8D8HC-16X 16GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
Hexon Technology Pte Ltd HEXON 1GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT451S6AFR8A-PB 4GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-3200C16-8GFX 8GB
报告一个错误
×
Bug description
Source link