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Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3600C14-16GTZN 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs G Skill Intl F4-3600C14-16GTZN 16GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分
star star star star star
G Skill Intl F4-3600C14-16GTZN 16GB

G Skill Intl F4-3600C14-16GTZN 16GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
G Skill Intl F4-3600C14-16GTZN 16GB 需要考虑的原因
G Skill Intl F4-3600C14-16GTZN 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 37
    左右 -23% 更低的延时
  • 更快的读取速度，GB/s
    22.3 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.3 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3600C14-16GTZN 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 30
  • 读取速度，GB/s
    13.9 left arrow 22.3
  • 写入速度，GB/s
    8.6 left arrow 16.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2395 left arrow 3873

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

G Skill Intl F4-3600C14-16GTZN 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston KM0VW4-MID 8GB
Kingston KM0VW4-MID 8GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
内存RAM
Crucial Technology CB8GS2400.C8D 8GB
Crucial Technology CB8GS2400.C8D 8GB
Kingston KHX4266C19D4/8GX 8GB
Kingston KHX4266C19D4/8GX 8GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Kingston KHX3200C20S4/16G 16GB
Kingston KHX3200C20S4/16G 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Smart Modular SF4641G8CKHI6DFSEG 8GB
Smart Modular SF4641G8CKHI6DFSEG 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Wilk Elektronik S.A. GY2666D464L16/8G 8GB
Wilk Elektronik S.A. GY2666D464L16/8G 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-2400C17-4GNT 4GB
G Skill Intl F4-2400C17-4GNT 4GB
内存RAM
G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F5-6000J3636F16G 16GB
Asgard VMA44UI-MEC1U2AW2 32GB
Asgard VMA44UI-MEC1U2AW2 32GB
内存RAM
SK Hynix HMP125U6EFR8C-S6 2GB
SK Hynix HMP125U6EFR8C-S6 2GB
Neo Forza GKE160SO204808-3200 16GB
Neo Forza GKE160SO204808-3200 16GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F4-3200C15-8GVK 8GB
G Skill Intl F4-3200C15-8GVK 8GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Terabyte Co Ltd RCX2-16G3600A 8GB
Terabyte Co Ltd RCX2-16G3600A 8GB
内存RAM