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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston MSI24D4S7D8MHMH6 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Kingston MSI24D4S7D8MHMH6 16GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分
star star star star star
Kingston MSI24D4S7D8MHMH6 16GB

Kingston MSI24D4S7D8MHMH6 16GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
  • 更快的写入速度，GB/s
    8.6 left arrow 7.1
    测试中的平均数值
Kingston MSI24D4S7D8MHMH6 16GB 需要考虑的原因
Kingston MSI24D4S7D8MHMH6 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 37
    左右 -42% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston MSI24D4S7D8MHMH6 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 26
  • 读取速度，GB/s
    13.9 left arrow 13.9
  • 写入速度，GB/s
    8.6 left arrow 7.1
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2395 left arrow 2192

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

Kingston MSI24D4S7D8MHMH6 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM5S16GM4800A40K2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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SK Hynix HYMP512U64CP8-Y5 1GB
A-DATA Technology DDR4 3333 2OZ 4GB
A-DATA Technology DDR4 3333 2OZ 4GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
V-GEN D4H8GL36A8TXV 8GB
V-GEN D4H8GL36A8TXV 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Transcend Information JM2666HLG-16GK 8GB
Transcend Information JM2666HLG-16GK 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Corsair CMSX32GX4M2A3000C18 16GB
Corsair CMSX32GX4M2A3000C18 16GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
G Skill Intl F4-2400C15-8GIS 8GB
G Skill Intl F4-2400C15-8GIS 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMR32GX4M2F3600C18 16GB
Corsair CMR32GX4M2F3600C18 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C14-16GTZN 16GB
G Skill Intl F4-3600C14-16GTZN 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A1K43BB1-CRC 8GB
Samsung M471A1K43BB1-CRC 8GB
内存RAM
Ramaxel Technology RMT1970ED48E8F1066 2GB
Ramaxel Technology RMT1970ED48E8F1066 2GB
Smart Modular SF4642G8CK8IEHLSBG 16GB
Smart Modular SF4642G8CK8IEHLSBG 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CM4X16GE2933C19S2 16MB
Corsair CM4X16GE2933C19S2 16MB
内存RAM
Team Group Inc. Team-Value-800 2GB
Team Group Inc. Team-Value-800 2GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
内存RAM