Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Samsung M474A2K43BB1-CPB 16GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

Samsung M474A2K43BB1-CPB 16GB

Samsung M474A2K43BB1-CPB 16GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

Samsung M474A2K43BB1-CPB 16GB

需要考虑的原因
Samsung M474A2K43BB1-CPB 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 -32% 更低的延时
更快的读取速度，GB/s

14.3 13.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Samsung M474A2K43BB1-CPB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 28
读取速度，GB/s

13.9 14.3
写入速度，GB/s

8.6 8.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2395 2361

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK16GX4M2A2133C13 8GB

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Kingston 9905403-061.A00LF 2GB

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Essencore Limited KD48GU880-36A180U 8GB

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Kingston XRMWRN-HYA 16GB

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Corsair CMK64GX4M4A2666C16 16GB

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Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

G Skill Intl F4-2400C17-8GVR 8GB

G Skill Intl F4-2400C17-8GVR 8GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Kingston KHX2666C15S4/8G 8GB

Kingston KHX2666C15S4/8G 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston KHX3000C15D4/8GX 8GB

Kingston KHX3000C15D4/8GX 8GB

Kingston 9905417-061.A00G 4GB

Kingston 9905417-061.A00G 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB