Nanya Technology M2F8G64CB8HC9N-DI 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

总分

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 37

左右 -61% 更低的延时
更快的读取速度，GB/s

17.2 13.9

测试中的平均数值
更快的写入速度，GB/s

13.0 8.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 23
读取速度，GB/s

13.9 17.2
写入速度，GB/s

8.6 13.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2395 3004

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Transcend Information JM2400HLB-8G 8GB

Transcend Information JM2400HLB-8G 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Crucial Technology BL8G32C16S4B.M8FE 8GB

Crucial Technology BL8G32C16S4B.M8FE 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Kingston KTD3KX-MIB 8GB

Kingston KTD3KX-MIB 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

Corsair CMW32GX4M4K3733C17 8GB

Corsair CMW32GX4M4K3733C17 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-3600C15-8GTZ 8GB

G Skill Intl F4-3600C15-8GTZ 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

A-DATA Technology AM2P32NC8W1-BCFS 8GB

A-DATA Technology AM2P32NC8W1-BCFS 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-3000C16-8GTRS 8GB

G Skill Intl F4-3000C16-8GTRS 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Essencore Limited IM44GU48N28-GGGHM 4GB

Essencore Limited IM44GU48N28-GGGHM 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Samsung M378A5143TB2-CTD 4GB

Samsung M378A5143TB2-CTD 4GB