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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Smart Modular SF4722G4CKHH6DFSDS 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Smart Modular SF4722G4CKHH6DFSDS 16GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分
star star star star star
Smart Modular SF4722G4CKHH6DFSDS 16GB

Smart Modular SF4722G4CKHH6DFSDS 16GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 42
    左右 12% 更低的延时
  • 更快的读取速度，GB/s
    13.9 left arrow 11.1
    测试中的平均数值
Smart Modular SF4722G4CKHH6DFSDS 16GB 需要考虑的原因
Smart Modular SF4722G4CKHH6DFSDS 16GB
报告一个错误
  • 更快的写入速度，GB/s
    9.3 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Smart Modular SF4722G4CKHH6DFSDS 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 42
  • 读取速度，GB/s
    13.9 left arrow 11.1
  • 写入速度，GB/s
    8.6 left arrow 9.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2395 left arrow 2551

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

Smart Modular SF4722G4CKHH6DFSDS 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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Kingston 9905458-017.A01LF 4GB
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内存RAM
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内存RAM
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内存RAM
Kingston ACR256X64D3S1333C9 2GB
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A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
内存RAM
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内存RAM
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Patriot Memory (PDP Systems) 4266 C18 Series 8GB
内存RAM
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内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
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内存RAM
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Samsung M471B5273EB0-CK0 4GB
内存RAM
Corsair VS2GB1333D4 2GB
Corsair VS2GB1333D4 2GB
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Chun Well Technology Holding Limited CL18-20-20 D4-3600
内存RAM