Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Corsair CMD32GX4M4C3466C16W 8GB

总分

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分

Corsair CMD32GX4M4C3466C16W 8GB

Corsair CMD32GX4M4C3466C16W 8GB

差异规格评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB

需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB

报告一个错误

Corsair CMD32GX4M4C3466C16W 8GB

需要考虑的原因
Corsair CMD32GX4M4C3466C16W 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 92

左右 -360% 更低的延时
更快的读取速度，GB/s

20.3 2

测试中的平均数值
更快的写入速度，GB/s

16.3 1,266.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Corsair CMD32GX4M4C3466C16W 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

92 20
读取速度，GB/s

2,105.4 20.3
写入速度，GB/s

1,266.1 16.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

339 3708

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology BLM8G40C18U4B.M8FE1 8GB

Crucial Technology BLM8G40C18U4B.M8FE1 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Corsair CMD16GX4M2B3200C14 8GB

Corsair CMD16GX4M2B3200C14 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Samsung M393A2K43BB1-CRCA1 16GB

Samsung M393A2K43BB1-CRCA1 16GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

AMD R748G2133U2S 8GB

AMD R748G2133U2S 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

AMD R334G1339U2S 4GB

AMD R334G1339U2S 4GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Apacer Technology 78.CAGSZ.4070B 8GB

Apacer Technology 78.CAGSZ.4070B 8GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Crucial Technology BLS8G4D26BFSB.16FE 8GB

Crucial Technology BLS8G4D26BFSB.16FE 8GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Kingston KF3000C16D4/32GX 32GB

Kingston KF3000C16D4/32GX 32GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Dust Leopard DDR4-2400 C16 8GB 8GB

Dust Leopard DDR4-2400 C16 8GB 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT8G4SFS8266.C8FD1 8GB

Crucial Technology CT8G4SFS8266.C8FD1 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C

Team Group Inc. TEAMGROUP-UD4-4133 8GB

Team Group Inc. TEAMGROUP-UD4-4133 8GB