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Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-2400C17-16GIS 16GB
比较
Nanya Technology M2N1G64TUH8D5F-AC 1GB vs G Skill Intl F4-2400C17-16GIS 16GB
总分
Nanya Technology M2N1G64TUH8D5F-AC 1GB
总分
G Skill Intl F4-2400C17-16GIS 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
更快的读取速度,GB/s
2
16.7
测试中的平均数值
需要考虑的原因
G Skill Intl F4-2400C17-16GIS 16GB
报告一个错误
低于PassMark测试中的延时,ns
31
92
左右 -197% 更低的延时
更快的写入速度,GB/s
9.8
1,266.1
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-2400C17-16GIS 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
92
31
读取速度,GB/s
2,105.4
16.7
写入速度,GB/s
1,266.1
9.8
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
339
2888
Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB
G Skill Intl F4-2400C17-16GIS 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M4 70T5663QZ3-CF7 2GB
Kingston 9965589-017.D00G 8GB
Kingston 99U5584-004.A00LF 4GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Mushkin MRA4S320GJJM32G 32GB
Kingston KHX1600C9D3/4GX 4GB
G Skill Intl F4-3200C16-8GTZKO 8GB
Strontium EVMT8G1600U86S 8GB
Kingston 99U5701-003.A00G 16GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
G Skill Intl F4-2800C16-8GVG 8GB
A-DATA Technology DQVE1B16 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
SK Hynix HMT325S6CFR8C-H9 2GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3600C16-16GTRGC 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Samsung M4 70T5663QZ3-CF7 2GB
G Skill Intl F4-3600C17-8GTZ 8GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Avant Technology J642GU44J2320ND 16GB
SK Hynix HMT325S6CFR8C-PB 2GB
Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB
报告一个错误
×
Bug description
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