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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Inmos + 256MB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Inmos + 256MB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
Inmos + 256MB

Inmos + 256MB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 11.5
    测试中的平均数值
Inmos + 256MB 需要考虑的原因
Inmos + 256MB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 92
    左右 -207% 更低的延时
  • 更快的写入速度，GB/s
    9.1 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    16800 left arrow 6400
    左右 2.63 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Inmos + 256MB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 30
  • 读取速度，GB/s
    2,105.4 left arrow 11.5
  • 写入速度，GB/s
    1,266.1 left arrow 9.1
  • 内存带宽，mbps
    6400 left arrow 16800
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow no data
  • 排名PassMark (越多越好)
    339 left arrow 2318

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

Inmos + 256MB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Inmos + 256MB
Inmos + 256MB
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