Nanya Technology M2S8G64CC8HB5N-DI 8GB vs Crucial Technology 8G4US2400.M8B1 8GB

总分

Nanya Technology M2S8G64CC8HB5N-DI 8GB

Nanya Technology M2S8G64CC8HB5N-DI 8GB

总分

Crucial Technology 8G4US2400.M8B1 8GB

Crucial Technology 8G4US2400.M8B1 8GB

差异规格评论

差异

Nanya Technology M2S8G64CC8HB5N-DI 8GB

需要考虑的原因
Nanya Technology M2S8G64CC8HB5N-DI 8GB

报告一个错误

Crucial Technology 8G4US2400.M8B1 8GB

需要考虑的原因
Crucial Technology 8G4US2400.M8B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 42

左右 -83% 更低的延时
更快的读取速度，GB/s

17.1 11.8

测试中的平均数值
更快的写入速度，GB/s

12.2 7.7

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2S8G64CC8HB5N-DI 8GB

Crucial Technology 8G4US2400.M8B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 23
读取速度，GB/s

11.8 17.1
写入速度，GB/s

7.7 12.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2075 2898

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2S8G64CC8HB5N-DI 8GB

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Kingston 99U5403-036.A00G 4GB

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G Skill Intl F4-3200C15-16GTZR 16GB

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Crucial Technology CT16G4SFS832A.C8FB 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston KH2400C15D4/8 8GB

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Kingston KVT8FP-HYC 4GB

Crucial Technology CT4G4DFS8266.C8FF 4GB

Crucial Technology CT4G4DFS8266.C8FF 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Mushkin MR[A/B]4U300JJJM16G 16GB

Mushkin MR[A/B]4U300JJJM16G 16GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

G Skill Intl F4-3600C17-16GTZKW 16GB

G Skill Intl F4-3600C17-16GTZKW 16GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB