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Nanya Technology M2S8G64CC8HB5N-DI 8GB
Crucial Technology CT102464BF160B.T16 8GB

Nanya Technology M2S8G64CC8HB5N-DI 8GB vs Crucial Technology CT102464BF160B.T16 8GB

总分
star star star star star
Nanya Technology M2S8G64CC8HB5N-DI 8GB

Nanya Technology M2S8G64CC8HB5N-DI 8GB

总分
star star star star star
Crucial Technology CT102464BF160B.T16 8GB

Crucial Technology CT102464BF160B.T16 8GB

差异 规格 评论

差异

Nanya Technology M2S8G64CC8HB5N-DI 8GB 需要考虑的原因
Nanya Technology M2S8G64CC8HB5N-DI 8GB
报告一个错误
Crucial Technology CT102464BF160B.T16 8GB 需要考虑的原因
Crucial Technology CT102464BF160B.T16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 42
    左右 -2% 更低的延时
  • 更快的读取速度，GB/s
    12.1 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.3 left arrow 7.7
    测试中的平均数值

规格

完整的技术规格清单
Nanya Technology M2S8G64CC8HB5N-DI 8GB
Crucial Technology CT102464BF160B.T16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    42 left arrow 41
  • 读取速度，GB/s
    11.8 left arrow 12.1
  • 写入速度，GB/s
    7.7 left arrow 8.3
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2075 left arrow 2217

Nanya Technology M2S8G64CC8HB5N-DI 8GB RAM的比较

AMD R538G1601S2LS 8GB
Samsung M391A1G43EB1-CPB 8GB

Crucial Technology CT102464BF160B.T16 8GB RAM的比较

Kingston ACR16D3LS1KBG/8G 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2S8G64CC8HB5N-DI 8GB
Nanya Technology M2S8G64CC8HB5N-DI 8GB
Crucial Technology CT102464BF160B.T16 8GB
Crucial Technology CT102464BF160B.T16 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Gloway International (HK) STK4U2400D17161C 16GB
Gloway International (HK) STK4U2400D17161C 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology CT4G4SFS8266.C8FE 4GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston 99U5734-036.A00G 16GB
Kingston 99U5734-036.A00G 16GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Corsair CMD64GX4M4C3200C16 16GB
Corsair CMD64GX4M4C3200C16 16GB
内存RAM
Kingston KHX1866C10D3/4G 4GB
Kingston KHX1866C10D3/4G 4GB
Apacer Technology 78.B1GQB.4010B 4GB
Apacer Technology 78.B1GQB.4010B 4GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Samsung M474A4G43MB1-CTD 32GB
Samsung M474A4G43MB1-CTD 32GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Essencore Limited KD44GU481-26N1600 4GB
Essencore Limited KD44GU481-26N1600 4GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
AMD R748G2606U2S 8GB
AMD R748G2606U2S 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston KHX3333C16D4/8GX 8GB
Kingston KHX3333C16D4/8GX 8GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
G Skill Intl F4-2666C15-4GVR 4GB
G Skill Intl F4-2666C15-4GVR 4GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-4400C19-32GVK 32GB
G Skill Intl F4-4400C19-32GVK 32GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Corsair CMK32GX4M2B3200C16 16GB
Corsair CMK32GX4M2B3200C16 16GB
内存RAM