Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Corsair CMX8GX3M2A1600C9 4GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

Corsair CMX8GX3M2A1600C9 4GB

Corsair CMX8GX3M2A1600C9 4GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 39

左右 8% 更低的延时
更快的读取速度，GB/s

14.9 14.2

测试中的平均数值
更快的写入速度，GB/s

9.5 8.7

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Corsair CMX8GX3M2A1600C9 4GB

需要考虑的原因
Corsair CMX8GX3M2A1600C9 4GB

报告一个错误

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Corsair CMX8GX3M2A1600C9 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

36 39
读取速度，GB/s

14.9 14.2
写入速度，GB/s

9.5 8.7
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2292 2296

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N

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Crucial Technology CT51264BD1339.M16F 4GB

Corsair CMR32GX4M4C3466C16 8GB

Corsair CMR32GX4M4C3466C16 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

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SK Hynix HMA451U7AFR8N-TF 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

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SK Hynix HMA851S6DJR6N-VK 4GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Kingston KHX2400C15S4/16G 16GB

Kingston KHX2400C15S4/16G 16GB