Nanya Technology M2X4G64CB8HG9N-DG 4GB vs G Skill Intl F4-3200C16-4GVKB 4GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

G Skill Intl F4-3200C16-4GVKB 4GB

G Skill Intl F4-3200C16-4GVKB 4GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

G Skill Intl F4-3200C16-4GVKB 4GB

需要考虑的原因
G Skill Intl F4-3200C16-4GVKB 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 36

左右 -24% 更低的延时
更快的读取速度，GB/s

18 14.9

测试中的平均数值
更快的写入速度，GB/s

13.9 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

G Skill Intl F4-3200C16-4GVKB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 29
读取速度，GB/s

14.9 18.0
写入速度，GB/s

9.5 13.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2292 3049

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avant Technology J642GU42J7240NF 16GB

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SK Hynix HYMP512U64CP8-Y5 1GB

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SK Hynix HYMP125U64CP8-S6 2GB

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Samsung M471A2K43DB1-CWE 16GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

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Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

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Kingston 99U5471-052.A00LF 8GB

Samsung M378A2K43CB1-CRC 16GB

Samsung M378A2K43CB1-CRC 16GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Kingston KHX2666C16D4/32GX 32GB

Kingston KHX2666C16D4/32GX 32GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

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Elpida EBJ40UG8BBU0-GN-F 4GB

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G Skill Intl F4-3000C16-16GVRB 16GB