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Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-4000C15-8GVK 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB vs G Skill Intl F4-4000C15-8GVK 8GB

总分
star star star star star
Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分
star star star star star
G Skill Intl F4-4000C15-8GVK 8GB

G Skill Intl F4-4000C15-8GVK 8GB

差异 规格 评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB 需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB
报告一个错误
G Skill Intl F4-4000C15-8GVK 8GB 需要考虑的原因
G Skill Intl F4-4000C15-8GVK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 36
    左右 -57% 更低的延时
  • 更快的读取速度，GB/s
    20.7 left arrow 14.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    20.2 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-4000C15-8GVK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 23
  • 读取速度，GB/s
    14.9 left arrow 20.7
  • 写入速度，GB/s
    9.5 left arrow 20.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2292 left arrow 4247

Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM的比较

Kingston 9905402-592.A00LF 4GB
SK Hynix Kingston 4GB

G Skill Intl F4-4000C15-8GVK 8GB RAM的比较

Panram International Corporation W4U2400PS-4G 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
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G Skill Intl F4-4000C15-8GVK 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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SK Hynix HMAA4GU6AJR8N-XN 32GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
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