Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Inmos + 256MB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

Inmos + 256MB

Inmos + 256MB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

更快的读取速度，GB/s

14.9 11.5

测试中的平均数值
更快的写入速度，GB/s

9.5 9.1

测试中的平均数值

Inmos + 256MB

需要考虑的原因
Inmos + 256MB

报告一个错误

低于PassMark测试中的延时，ns

30 36

左右 -20% 更低的延时
更高的内存带宽，mbps

16800 12800

左右 1.31 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Inmos + 256MB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 30
读取速度，GB/s

14.9 11.5
写入速度，GB/s

9.5 9.1
内存带宽，mbps

12800 16800

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz no data
排名PassMark (越多越好)

2292 2318

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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