Nanya Technology M2Y1G64TU8HB0B-25C 1GB vs SK Hynix HYMP512U64CP8-Y5 1GB

总分

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

总分

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

差异规格评论

差异

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

需要考虑的原因
Nanya Technology M2Y1G64TU8HB0B-25C 1GB

报告一个错误

低于PassMark测试中的延时，ns

61 63

左右 3% 更低的延时
更快的写入速度，GB/s

2,077.3 1,583.7

测试中的平均数值
更高的内存带宽，mbps

6400 5300

左右 1.21% 更高的带宽

SK Hynix HYMP512U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP512U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

3 3

测试中的平均数值

规格

完整的技术规格清单

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

61 63
读取速度，GB/s

3,835.2 3,895.6
写入速度，GB/s

2,077.3 1,583.7
内存带宽，mbps

6400 5300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 667 MHz
排名PassMark (越多越好)

606 639

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF2G64AZ-2G6D1 16GB

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Nanya Technology M2Y1G64TU8HB0B-25C 1GB

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SK Hynix HYMP512U64CP8-Y5 1GB

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Samsung M378A1G43DB0-CPB 8GB

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SK Hynix HMA851S6CJR6N-XN 4GB

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Kingston KHX1600C9D3/8G 8GB

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Kingston ACR512X64D3S13C9G 4GB

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A-DATA Technology AO1P32NC8W1-BDAS 8GB

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Samsung M378A1G43DB0-CPB 8GB

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Corsair CM4X16GE2666C16K8 16GB

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G Skill Intl F4-2400C17-8GFT 8GB

G Skill Intl F4-2400C17-8GFT 8GB

Samsung M393B1G70BH0-YK0 8GB

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Corsair MK16GX44B3000C15 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

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