Nanya Technology M2Y51264TU88B0B-3C 512MB vs A-DATA Technology AO1P24HC4N2-BYNS 4GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

A-DATA Technology AO1P24HC4N2-BYNS 4GB

A-DATA Technology AO1P24HC4N2-BYNS 4GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

更快的读取速度，GB/s

3 14.4

测试中的平均数值

A-DATA Technology AO1P24HC4N2-BYNS 4GB

需要考虑的原因
A-DATA Technology AO1P24HC4N2-BYNS 4GB

报告一个错误

低于PassMark测试中的延时，ns

48 54

左右 -13% 更低的延时
更快的写入速度，GB/s

12.1 1,308.1

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

A-DATA Technology AO1P24HC4N2-BYNS 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 48
读取速度，GB/s

3,573.5 14.4
写入速度，GB/s

1,308.1 12.1
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

371 2080

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

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Elpida EBJ40UG8EFU0-GN-F 4GB

Corsair CMH16GX4M2Z3600C18 8GB

Corsair CMH16GX4M2Z3600C18 8GB

AMD AE34G1601U1 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Samsung T471A1K43CB1-CRC 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N