Nanya Technology M2Y51264TU88B0B-3C 512MB vs Crucial Technology CT16G4SFDFD4A.M16FH 16GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

Crucial Technology CT16G4SFDFD4A.M16FH 16GB

Crucial Technology CT16G4SFDFD4A.M16FH 16GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

更快的读取速度，GB/s

3 11.7

测试中的平均数值

Crucial Technology CT16G4SFDFD4A.M16FH 16GB

需要考虑的原因
Crucial Technology CT16G4SFDFD4A.M16FH 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 54

左右 -100% 更低的延时
更快的写入速度，GB/s

6.0 1,308.1

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

Crucial Technology CT16G4SFDFD4A.M16FH 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 27
读取速度，GB/s

3,573.5 11.7
写入速度，GB/s

1,308.1 6.0
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

371 1901

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston ACR16D3LS1KNG/8G 8GB

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G Skill Intl F4-3800C14-16GTZN 16GB

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G Skill Intl F3-2400C11-8GSR 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Corsair CMY8GX3M2A2666C10 4GB

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Samsung M393B1G70QH0-YK0 8GB

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Micron Technology 16ATF4G64AZ-3G2B1 32GB

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V-Color Technology Inc. TL48G24S815RGB 8GB

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Kingston ACR512X64D3S13C9G 4GB

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Samsung M474A2K43BB1-CRC 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Corsair CM4B8G7L2666A16K2-O 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Kllisre DDR4-8GB 8GB

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Samsung M393B2G70BH0-CK0 16GB

Ramaxel Technology RMSA3270MB86H9F2400 4GB

Ramaxel Technology RMSA3270MB86H9F2400 4GB