Nanya Technology M2Y51264TU88B0B-3C 512MB vs G Skill Intl F4-3200C16-8GRKB 8GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

G Skill Intl F4-3200C16-8GRKB 8GB

G Skill Intl F4-3200C16-8GRKB 8GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

更快的读取速度，GB/s

3 19.9

测试中的平均数值

G Skill Intl F4-3200C16-8GRKB 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GRKB 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 54

左右 -184% 更低的延时
更快的写入速度，GB/s

15.0 1,308.1

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

G Skill Intl F4-3200C16-8GRKB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 19
读取速度，GB/s

3,573.5 19.9
写入速度，GB/s

1,308.1 15.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

371 3359

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

G Skill Intl F4-3200C15-4GRKD 4GB

G Skill Intl F4-3200C15-4GRKD 4GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Corsair CMG32GX4M2D3600C18 16GB

Corsair CMG32GX4M2D3600C18 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Apacer Technology 78.D1GMM.AU10B 16GB

Apacer Technology 78.D1GMM.AU10B 16GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

G Skill Intl F4-3200C16-16GVR 16GB

G Skill Intl F4-3200C16-16GVR 16GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

G Skill Intl F4-3200C16-8GRKB 8GB

G Skill Intl F4-3200C16-8GRKB 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Micron Technology 8ATF1G64AZ-2G6D1 8GB

Micron Technology 8ATF1G64AZ-2G6D1 8GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Kingston 9965596-002.B00G 4GB

Kingston 9965596-002.B00G 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Kingston KHX2400C15D4/4G 4GB

Kingston KHX2400C15D4/4G 4GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F4-4000C17-16GTRSB 16GB

G Skill Intl F4-4000C17-16GTRSB 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Corsair CM4X8GD3600C18K2D 8GB

Corsair CM4X8GD3600C18K2D 8GB

Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

Crucial Technology CT8G4SFS832A.C8FE 8GB

Crucial Technology CT8G4SFS832A.C8FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Kingston 9905711-002.A00G 4GB

Kingston 9905711-002.A00G 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1