Nanya Technology M2Y51264TU88B0B-3C 512MB vs Samsung M378A1G43EB1-CRC 8GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

Samsung M378A1G43EB1-CRC 8GB

Samsung M378A1G43EB1-CRC 8GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

更快的读取速度，GB/s

3 16.1

测试中的平均数值

Samsung M378A1G43EB1-CRC 8GB

需要考虑的原因
Samsung M378A1G43EB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 54

左右 -135% 更低的延时
更快的写入速度，GB/s

9.9 1,308.1

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

Samsung M378A1G43EB1-CRC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 23
读取速度，GB/s

3,573.5 16.1
写入速度，GB/s

1,308.1 9.9
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

371 2591

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Samsung M378A1G43EB1-CRC 8GB

Samsung M378A1G43EB1-CRC 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Corsair CMK32GX4M2D3600C18 16GB

Corsair CMK32GX4M2D3600C18 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Mushkin MES4S213FF16G28 16GB

Mushkin MES4S213FF16G28 16GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Corsair CMK16GX4M2Z3200C16 8GB

Corsair CMK16GX4M2Z3200C16 8GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Kingston 99U5704-001.A00G 4GB

Kingston 99U5704-001.A00G 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

G Skill Intl F4-3600C16-32GTZR 32GB

G Skill Intl F4-3600C16-32GTZR 32GB

Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

Samsung M391A1G43DB0-CPB 8GB

Samsung M391A1G43DB0-CPB 8GB

Samsung M471A2K43BB1-CPB 16GB

Samsung M471A2K43BB1-CPB 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingston X0N6VG-HYD2 16GB

Kingston X0N6VG-HYD2 16GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

takeMS International AG TMS2GS264D081805AW 2GB

takeMS International AG TMS2GS264D081805AW 2GB

G Skill Intl F3-2400C10-8GTX 8GB

G Skill Intl F3-2400C10-8GTX 8GB

Zotac Technology Ltd OD48G32S816-ZHC 8GB

Zotac Technology Ltd OD48G32S816-ZHC 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMD16GX4M2A2666C15 8GB

Corsair CMD16GX4M2A2666C15 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMW32GX4M4D3600C18 8GB

Corsair CMW32GX4M4D3600C18 8GB