Nanya Technology NT2GC64B8HC0NS-CG 2GB vs Micron Technology 8ATF2G64HZ-3G2E1 16GB

总分

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

总分

Micron Technology 8ATF2G64HZ-3G2E1 16GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

差异规格评论

差异

Nanya Technology NT2GC64B8HC0NS-CG 2GB

需要考虑的原因
Nanya Technology NT2GC64B8HC0NS-CG 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 35

左右 20% 更低的延时

Micron Technology 8ATF2G64HZ-3G2E1 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E1 16GB

报告一个错误

更快的读取速度，GB/s

15.7 11.7

测试中的平均数值
更快的写入速度，GB/s

12.1 8.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 35
读取速度，GB/s

11.7 15.7
写入速度，GB/s

8.4 12.1
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1578 3045

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL16G32C16U4B.M16FE1 16GB

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Crucial Technology BLS4G4D240FSE.M8FADM 4GB

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G Skill Intl F4-3000C16-16GSXFB 16GB

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Crucial Technology BLS16G4D30AESE.M16FE 16GB

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Kingston ACR256X64D3S1333C9 2GB

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Team Group Inc. DDR4 2666 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

Transcend Information JM3200HLB-16GK 8GB

Transcend Information JM3200HLB-16GK 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

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Corsair CM4X16GC3200C16K2 16GB

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Kingston 9905471-002.A00LF 2GB

Apacer Technology 78.CAGP7.AZ20B 8GB

Apacer Technology 78.CAGP7.AZ20B 8GB