Nanya Technology NT2GT64U8HD0BN-AD 2GB vs EVGA 8GX-D4-3200-MR 8GB

总分

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分

EVGA 8GX-D4-3200-MR 8GB

EVGA 8GX-D4-3200-MR 8GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 17.8

测试中的平均数值

EVGA 8GX-D4-3200-MR 8GB

需要考虑的原因
EVGA 8GX-D4-3200-MR 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 72

左右 -148% 更低的延时
更快的写入速度，GB/s

13.2 1,938.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BN-AD 2GB

EVGA 8GX-D4-3200-MR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

72 29
读取速度，GB/s

4,241.0 17.8
写入速度，GB/s

1,938.7 13.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

677 3208

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Ramaxel Technology RMUA5180ME78HBF-2666 16GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Micron Technology 36ASF2G72PZ-2G3B1 16GB

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PNY Electronics PNY 2GB

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Samsung M471A2K43BB1-CTD 16GB

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Corsair CMW64GX4M2D3000C16 32GB

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Corsair CMK16GX4M4B3600C18 4GB

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Kingston 99U5471-056.A00LF 8GB

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A-DATA Technology AO1P32NC8W1-BDZS 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Micron Technology 8ATF1G64HZ-2G6D1 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB