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Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3733C17-8GTZA 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB vs G Skill Intl F4-3733C17-8GTZA 8GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分
star star star star star
G Skill Intl F4-3733C17-8GTZA 8GB

G Skill Intl F4-3733C17-8GTZA 8GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 20.2
    测试中的平均数值
G Skill Intl F4-3733C17-8GTZA 8GB 需要考虑的原因
G Skill Intl F4-3733C17-8GTZA 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 72
    左右 -200% 更低的延时
  • 更快的写入速度，GB/s
    15.5 left arrow 1,938.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3733C17-8GTZA 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    72 left arrow 24
  • 读取速度，GB/s
    4,241.0 left arrow 20.2
  • 写入速度，GB/s
    1,938.7 left arrow 15.5
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    677 left arrow 3744

Nanya Technology NT2GT64U8HD0BN-AD 2GB RAM的比较

Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB

G Skill Intl F4-3733C17-8GTZA 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CM4X16GC3200C16K2E 16GB
Corsair CM4X16GC3200C16K2E 16GB
内存RAM
Kingston KF548C38-16 16GB
Kingston KF548C38-16 16GB
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Kingston KF548C38-16 16GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Kllisre M471A3243BB0-CP50 16GB
Kllisre M471A3243BB0-CP50 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMWX8GD3600C18W4 8GB
Corsair CMWX8GD3600C18W4 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Corsair CMT128GX4M4C3200C16 32GB
Corsair CMT128GX4M4C3200C16 32GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
G Skill Intl F4-3600C19-16GSXK 16GB
G Skill Intl F4-3600C19-16GSXK 16GB
内存RAM
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
Kingston 9905702-400.A00G 8GB
Kingston 9905702-400.A00G 8GB
内存RAM
G Skill Intl F4-3600C19-8GSXWB 8GB
G Skill Intl F4-3600C19-8GSXWB 8GB
G Skill Intl F4-3600C17-16GTZKW 16GB
G Skill Intl F4-3600C17-16GTZKW 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Micron Technology AFLD416EH1P 16GB
Micron Technology AFLD416EH1P 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMK16GX4M2B3733C17 8GB
Corsair CMK16GX4M2B3733C17 8GB
内存RAM
G Skill Intl F4-3600C19-8GVRB 8GB
G Skill Intl F4-3600C19-8GVRB 8GB
G Skill Intl F4-3600C19-8GSXF 8GB
G Skill Intl F4-3600C19-8GSXF 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
G Skill Intl F4-2666C15-4GVR 4GB
G Skill Intl F4-2666C15-4GVR 4GB
内存RAM