Nanya Technology NT2GT64U8HD0BY-AD 2GB vs G Skill Intl F4-4500C19-8GTZKKE 8GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

G Skill Intl F4-4500C19-8GTZKKE 8GB

G Skill Intl F4-4500C19-8GTZKKE 8GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 23

测试中的平均数值

G Skill Intl F4-4500C19-8GTZKKE 8GB

需要考虑的原因
G Skill Intl F4-4500C19-8GTZKKE 8GB

报告一个错误

低于PassMark测试中的延时，ns

15 64

左右 -327% 更低的延时
更快的写入速度，GB/s

21.0 2,256.8

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

G Skill Intl F4-4500C19-8GTZKKE 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 15
读取速度，GB/s

4,651.3 23.0
写入速度，GB/s

2,256.8 21.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

837 4039

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Samsung 1600 CL10 Series 8GB

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Micron Technology 16G2666CL19 16GB

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Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Micron Technology AFLD44EK2P 4GB

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Corsair CMY8GX3M2A2133C8 4GB

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SK Hynix HMA84GL7AMR4N-TF 32GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

G Skill Intl F4-3200C14-16GTZN 16GB

G Skill Intl F4-3200C14-16GTZN 16GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

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Kingston 9905624-018.A00G 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB