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Nanya Technology NT4GC64B8HG0NF-CG 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB

Nanya Technology NT4GC64B8HG0NF-CG 4GB vs Crucial Technology CT4G4DFS8213.8FA11 4GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NF-CG 4GB

Nanya Technology NT4GC64B8HG0NF-CG 4GB

总分
star star star star star
Crucial Technology CT4G4DFS8213.8FA11 4GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NF-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NF-CG 4GB
报告一个错误
Crucial Technology CT4G4DFS8213.8FA11 4GB 需要考虑的原因
Crucial Technology CT4G4DFS8213.8FA11 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 44
    左右 -83% 更低的延时
  • 更快的读取速度，GB/s
    15.4 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.5 left arrow 7.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NF-CG 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 24
  • 读取速度，GB/s
    12.8 left arrow 15.4
  • 写入速度，GB/s
    7.7 left arrow 11.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2037 left arrow 2534

Nanya Technology NT4GC64B8HG0NF-CG 4GB RAM的比较

Kingston 99U5458-001.A00LF 2GB

Crucial Technology CT4G4DFS8213.8FA11 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
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Gold Key Technology Co Ltd NMUD480E82-3000D 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
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内存RAM
Samsung M393B1K70QB0-CK0 8GB
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内存RAM
Kingston 9905403-061.A00LF 2GB
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内存RAM
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内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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内存RAM
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Kingston 99P5471-002.AOOLF 4GB
G Skill Intl F4-3000C16-8GTZN 8GB
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内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
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G Skill Intl F4-4800C18-8GTRS 8GB
内存RAM
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Kingston 99U5403-036.A00G 4GB
G Skill Intl F4-3600C16-8GTESC 8GB
G Skill Intl F4-3600C16-8GTESC 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Mushkin 99[2/7/4]190F 4GB
Mushkin 99[2/7/4]190F 4GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Transcend Information TS2GLH64V1B 16GB
Transcend Information TS2GLH64V1B 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
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G Skill Intl F4-3600C18-8GTZN 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
内存RAM