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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Avant Technology J641GU42J5213N0 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Avant Technology J641GU42J5213N0 8GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
Avant Technology J641GU42J5213N0 8GB

Avant Technology J641GU42J5213N0 8GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
Avant Technology J641GU42J5213N0 8GB 需要考虑的原因
Avant Technology J641GU42J5213N0 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 42
    左右 -62% 更低的延时
  • 更快的读取速度，GB/s
    14.4 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.7 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Avant Technology J641GU42J5213N0 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 26
  • 读取速度，GB/s
    9.7 left arrow 14.4
  • 写入速度，GB/s
    6.0 left arrow 9.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 2394

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Avant Technology J641GU42J5213N0 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378A1K43CB2-CRC 8GB
Samsung M378A1K43CB2-CRC 8GB
SK Hynix HMA851U6AFR6N-UH 4GB
SK Hynix HMA851U6AFR6N-UH 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Avant Technology J641GU42J5213N0 8GB
Avant Technology J641GU42J5213N0 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3600C14-16GTRS 16GB
G Skill Intl F4-3600C14-16GTRS 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Corsair CMSX64GX4M4A2666C18 16GB
Corsair CMSX64GX4M4A2666C18 16GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
G Skill Intl F4-4000C18-16GTZR 16GB
G Skill Intl F4-4000C18-16GTZR 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
G Skill Intl F4-3200C16-8GTZB 8GB
G Skill Intl F4-3200C16-8GTZB 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
G Skill Intl F4-2133C15-4GRR 4GB
G Skill Intl F4-2133C15-4GRR 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston 99U5702-101.A00G 8GB
Kingston 99U5702-101.A00G 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-2800C16-4GRR 4GB
G Skill Intl F4-2800C16-4GRR 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB
内存RAM