Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Corsair CM4X8GD3000C16K4 8GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Corsair CM4X8GD3000C16K4 8GB

Corsair CM4X8GD3000C16K4 8GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Corsair CM4X8GD3000C16K4 8GB

需要考虑的原因
Corsair CM4X8GD3000C16K4 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 42

左右 -27% 更低的延时
更快的读取速度，GB/s

16.6 9.7

测试中的平均数值
更快的写入速度，GB/s

13.3 6.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Corsair CM4X8GD3000C16K4 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 33
读取速度，GB/s

9.7 16.6
写入速度，GB/s

6.0 13.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1396 3122

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

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Samsung M378A2K43CB1-CTD 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3000C16-8GTZR 8GB

G Skill Intl F4-3000C16-8GTZR 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Apacer Technology 78.C1GMM.AUF0B 8GB

Apacer Technology 78.C1GMM.AUF0B 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

G Skill Intl F4-3200C16-16GTZR 16GB

G Skill Intl F4-3200C16-16GTZR 16GB