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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMD64GX4M8A2400C14 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Corsair CMD64GX4M8A2400C14 8GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
Corsair CMD64GX4M8A2400C14 8GB

Corsair CMD64GX4M8A2400C14 8GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
Corsair CMD64GX4M8A2400C14 8GB 需要考虑的原因
Corsair CMD64GX4M8A2400C14 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 42
    左右 -50% 更低的延时
  • 更快的读取速度，GB/s
    12.9 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.6 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMD64GX4M8A2400C14 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 28
  • 读取速度，GB/s
    9.7 left arrow 12.9
  • 写入速度，GB/s
    6.0 left arrow 10.6
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 2846

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Corsair CMD64GX4M8A2400C14 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Samsung M378A1G44BB0-CWE 8GB
Samsung M378A1G44BB0-CWE 8GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
SK Hynix HMA81GR7MFR8N-UH 8GB
SK Hynix HMA81GR7MFR8N-UH 8GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Samsung M391A1G43EB1-CPB 8GB
Samsung M391A1G43EB1-CPB 8GB
内存RAM
Corsair CMX8GX3M2A1600C11 4GB
Corsair CMX8GX3M2A1600C11 4GB
Crucial Technology CT8G4DFS8266.C8FN 8GB
Crucial Technology CT8G4DFS8266.C8FN 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
G Skill Intl F4-3600C16-8GTESC 8GB
G Skill Intl F4-3600C16-8GTESC 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston 9965662-004.A00G 16GB
Kingston 9965662-004.A00G 16GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Crucial Technology BL8G32C16U4BL.8FE 8GB
Crucial Technology BL8G32C16U4BL.8FE 8GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
A-DATA Technology DDR4 2400 2OZ 8GB
A-DATA Technology DDR4 2400 2OZ 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Samsung M393A4K40BB1-CRC 32GB
Samsung M393A4K40BB1-CRC 32GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3000C16-16GTZR 16GB
G Skill Intl F4-3000C16-16GTZR 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Mushkin MR[ABC]4U360JNNM8G 8GB
Mushkin MR[ABC]4U360JNNM8G 8GB
内存RAM