Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Crucial Technology BLS4G4D26BFSE.8FD2 4GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Crucial Technology BLS4G4D26BFSE.8FD2 4GB

Crucial Technology BLS4G4D26BFSE.8FD2 4GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 70

左右 40% 更低的延时

Crucial Technology BLS4G4D26BFSE.8FD2 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSE.8FD2 4GB

报告一个错误

更快的读取速度，GB/s

16.1 9.7

测试中的平均数值
更快的写入速度，GB/s

8.4 6.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology BLS4G4D26BFSE.8FD2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 70
读取速度，GB/s

9.7 16.1
写入速度，GB/s

6.0 8.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1396 1838

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-3000C16-8GTZN 8GB

G Skill Intl F4-3000C16-8GTZN 8GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

SK Hynix HMA82GS6JJR8N-VK 16GB

SK Hynix HMA82GS6JJR8N-VK 16GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Corsair CMWB8G1L2666A16W4 8GB

Corsair CMWB8G1L2666A16W4 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

G Skill Intl F4-2400C15-4GNT 4GB

G Skill Intl F4-2400C15-4GNT 4GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

Corsair CMK16GX4M4B3733C17 4GB

Corsair CMK16GX4M4B3733C17 4GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology BL8G30C15U4R.M8FE 8GB

Crucial Technology BL8G30C15U4R.M8FE 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Samsung M471A2K43CB1-CTCT 16GB

Samsung M471A2K43CB1-CTCT 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Corsair CMD64GX4M4A2666C15 16GB

Corsair CMD64GX4M4A2666C15 16GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Corsair CMK64GX4M8A2400C14 8GB

Corsair CMK64GX4M8A2400C14 8GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

Kingston KF2666C16D4/8G 8GB

Kingston KF2666C16D4/8G 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

SK Hynix HMA851S6DJR6N-VK 4GB

SK Hynix HMA851S6DJR6N-VK 4GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Samsung M378A2K43DB1-CVF 16GB

Samsung M378A2K43DB1-CVF 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB