Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Crucial Technology CT16G4SFD8213.C16FAD 16GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Crucial Technology CT16G4SFD8213.C16FAD 16GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Crucial Technology CT16G4SFD8213.C16FAD 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8213.C16FAD 16GB

报告一个错误

低于PassMark测试中的延时，ns

41 42

左右 -2% 更低的延时
更快的读取速度，GB/s

12.3 9.7

测试中的平均数值
更快的写入速度，GB/s

9.7 6.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 41
读取速度，GB/s

9.7 12.3
写入速度，GB/s

6.0 9.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1396 2302

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Patriot Memory (PDP Systems) PSD48G320081 8GB

Patriot Memory (PDP Systems) PSD48G320081 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-3200C16-16GTZSW 16GB

G Skill Intl F4-3200C16-16GTZSW 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N

Kingston 9965525-010.A00LF 4GB

Kingston 9965525-010.A00LF 4GB

G Skill Intl F4-3000C16-16GISB 16GB

G Skill Intl F4-3000C16-16GISB 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

G Skill Intl F4-2400C17-4GFX 4GB

G Skill Intl F4-2400C17-4GFX 4GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Mushkin MR[ABC]4U360JNNM16G 16GB

Mushkin MR[ABC]4U360JNNM16G 16GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

G Skill Intl F4-3466C16-8GTZSK 8GB

G Skill Intl F4-3466C16-8GTZSK 8GB

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMK16GX4M2D2400C14 8GB

Corsair CMK16GX4M2D2400C14 8GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Corsair CMSX16GX4M1A2400C16 16GB

Corsair CMSX16GX4M1A2400C16 16GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N