Nanya Technology NT4GC64B8HG0NS-CG 4GB vs G Skill Intl F4-4400C17-8GVK 8GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

G Skill Intl F4-4400C17-8GVK 8GB

G Skill Intl F4-4400C17-8GVK 8GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

G Skill Intl F4-4400C17-8GVK 8GB

需要考虑的原因
G Skill Intl F4-4400C17-8GVK 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 42

左右 -75% 更低的延时
更快的读取速度，GB/s

20.6 9.7

测试中的平均数值
更快的写入速度，GB/s

20.0 6.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-4400C17-8GVK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 24
读取速度，GB/s

9.7 20.6
写入速度，GB/s

6.0 20.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1396 4029

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Crucial Technology CT16G4SFD8266.C8FBD1 16GB

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Micron Technology 36ASF2G72PZ-2G1A2 16GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

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Kingston 9905469-143.A00LF 4GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

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Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905663-006.A00G 16GB

Kingston 9905663-006.A00G 16GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Corsair CMK128GX4M8B3200C16 16GB

Corsair CMK128GX4M8B3200C16 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

G Skill Intl F4-3200C16-8GTZKY 8GB

G Skill Intl F4-3200C16-8GTZKY 8GB